[J-1-3] Self-aligned Bottom Source Tunnel Field-Effect Transistor (Btm-S TFET) with Si:C and Si:P Epitaxial Process

T. Miyata¹, S. Mori¹, E. Sugizaki¹, M. Goto¹, Y. Kondo¹, A. Hokazono¹, T. Ohguro¹, S. Kawanaka¹ (1.Toshiba Corp. (Japan))

https://doi.org/10.7567/SSDM.2014.J-1-3