[J-1-3] Self-aligned Bottom Source Tunnel Field-Effect Transistor (Btm-S TFET) with Si:C and Si:P Epitaxial Process

T. Miyata¹、S. Mori¹、E. Sugizaki¹、M. Goto¹、Y. Kondo¹、A. Hokazono¹、T. Ohguro¹、S. Kawanaka¹ (1.Toshiba Corp. (Japan))

https://doi.org/10.7567/SSDM.2014.J-1-3