[J-2-3] Effective Work Function Shift Induced by TiN Sacrificial Metal Gates as a Function of Their Thickness and Composition in 14nm NMOS devices

C. Suarez-Segovia^1,2, P. Caubet¹, V. Joseph¹, O. Gourhant¹, G. Romano¹, F. Domengie¹, G. Ghibaudo² (1.STMicroelectronics, 2.IMEP-LAHC (France))

https://doi.org/10.7567/SSDM.2014.J-2-3