The Japan Society of Applied Physics

[J-2-3] Effective Work Function Shift Induced by TiN Sacrificial Metal Gates as a Function of Their Thickness and Composition in 14nm NMOS devices

C. Suarez-Segovia1,2、P. Caubet1、V. Joseph1、O. Gourhant1、G. Romano1、F. Domengie1、G. Ghibaudo2 (1.STMicroelectronics、2.IMEP-LAHC (France))

https://doi.org/10.7567/SSDM.2014.J-2-3