[J-2-3] Effective Work Function Shift Induced by TiN Sacrificial Metal Gates as a Function of Their Thickness and Composition in 14nm NMOS devices

C. Suarez-Segovia^1,2、P. Caubet¹、V. Joseph¹、O. Gourhant¹、G. Romano¹、F. Domengie¹、G. Ghibaudo² (1.STMicroelectronics、2.IMEP-LAHC (France))

https://doi.org/10.7567/SSDM.2014.J-2-3