[J-3-2] Detailed Analysis of Minimum Operation Voltage (V_min) of Extraordinarily Unstable Cells in Fully Depleted Silicon-on-Thin-BOX (SOTB) 6T-SRAM

T. Mizutani¹、Y. Yamamoto²、H. Makiyama²、T. Yamashita²、H. Oda²、S. Kamohara²、N. Sugii²、T. Hiramoto¹ (1.Univ. of Tokyo、2.LEAP (Japan))

https://doi.org/10.7567/SSDM.2014.J-3-2