[J-3-2] Detailed Analysis of Minimum Operation Voltage (V_min) of Extraordinarily Unstable Cells in Fully Depleted Silicon-on-Thin-BOX (SOTB) 6T-SRAM

T. Mizutani¹, Y. Yamamoto², H. Makiyama², T. Yamashita², H. Oda², S. Kamohara², N. Sugii², T. Hiramoto¹ (1.Univ. of Tokyo, 2.LEAP (Japan))

https://doi.org/10.7567/SSDM.2014.J-3-2