High Reliability SRAM Development for 40nm Embedded Spilt Gate-MONOS

S. Okamoto; K. Maekawa; Y. Kawashima; K. Shiba; H. Sugiyama; M. Inoue; A. Nishida

doi:https://doi.org/10.7567/SSDM.2014.J-3-4

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[J-3-4] High Reliability SRAM Development for 40nm Embedded Spilt Gate-MONOS

S. Okamoto¹, K. Maekawa², Y. Kawashima¹, K. Shiba², H. Sugiyama¹, M. Inoue¹, A. Nishida¹ (1.Renesas Electronics Corp., 2.Renesas Semiconductor Manufacturing Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.J-3-4

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