[J-4-2] Mobility Model for Advanced SOI-MOSFETs Including Back-Gate Contribution

H. Zenitani¹, H. Miyamoto¹, H. Kikuchihara¹, U. Feldmann¹, H.J. Mattausch¹, M. Miura-Mattausch¹ (1.Hiroshima Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.J-4-2