[J-4-2] Mobility Model for Advanced SOI-MOSFETs Including Back-Gate Contribution

H. Zenitani¹、H. Miyamoto¹、H. Kikuchihara¹、U. Feldmann¹、H.J. Mattausch¹、M. Miura-Mattausch¹ (1.Hiroshima Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.J-4-2