The Japan Society of Applied Physics

[J-6-2] Strained Si0.1Ge0.9 on Strained-Si-on-Insulator (sSOI) pMOSFETs for Low-Power sSOI Based CMOS

K. Ikeda1, Y. Moriyama1, T. Irisawa1, M. Ono1, Y. Kamimuta1, M. Oda1, T. Miyaki1, E. Kurosawa1, T. Tezuka1 (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2014.J-6-2