[J-6-3] Study of Si- and SiGe-on-Insulator Ω-gate Nanowire PMOS FETs by Low-frequency Noise Measurements

M. Koyama^1,2、M. Cassé¹、S. Barraud¹、P. Nguyen^1,3、G. Ghibaudo⁴、H. Iwai²、G. Reimbold¹ (1.CEA-LETI、2.Tokyo Tech、3.SOITEC、4.IMEP-LAHC (France))

https://doi.org/10.7567/SSDM.2014.J-6-3