[J-6-3] Study of Si- and SiGe-on-Insulator Ω-gate Nanowire PMOS FETs by Low-frequency Noise Measurements

M. Koyama^1,2, M. Cassé¹, S. Barraud¹, P. Nguyen^1,3, G. Ghibaudo⁴, H. Iwai², G. Reimbold¹ (1.CEA-LETI, 2.Tokyo Tech, 3.SOITEC, 4.IMEP-LAHC (France))

https://doi.org/10.7567/SSDM.2014.J-6-3