Simulation, Fabrication and Initial Characterization of a Capacitive SiGe Integrated CMOS-MEMS High-G Accelerometer

V. Narasimhan; H. Li; C.S. Tan

doi:https://doi.org/10.7567/SSDM.2014.M-6-2

[M-6-2] Simulation, Fabrication and Initial Characterization of a Capacitive SiGe Integrated CMOS-MEMS High-G Accelerometer

V. Narasimhan¹, H. Li², C.S. Tan³ (1.Temasek Labs. @ Nanyang Tech. Univ., 2.School of Mechanical and Aerospace Engineering, Nanyang Tech. Univ., 3.School of Electrical and Electronic Engineering, Nanyang Tech. Univ. (Singapore))

https://doi.org/10.7567/SSDM.2014.M-6-2

2014 International Conference on Solid State Devices and Materials

[M-6-2] Simulation, Fabrication and Initial Characterization of a Capacitive SiGe Integrated CMOS-MEMS High-G Accelerometer