Simulation, Fabrication and Initial Characterization of a Capacitive SiGe Integrated CMOS-MEMS High-G Accelerometer

V. Narasimhan; H. Li; C.S. Tan

doi:https://doi.org/10.7567/SSDM.2014.M-6-2

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[M-6-2] Simulation, Fabrication and Initial Characterization of a Capacitive SiGe Integrated CMOS-MEMS High-G Accelerometer

V. Narasimhan¹、H. Li²、C.S. Tan³ (1.Temasek Labs. @ Nanyang Tech. Univ.、2.School of Mechanical and Aerospace Engineering, Nanyang Tech. Univ.、3.School of Electrical and Electronic Engineering, Nanyang Tech. Univ. (Singapore))

https://doi.org/10.7567/SSDM.2014.M-6-2

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