[M-9-1] 300 μs Short Interval Continuous Capturing Image Sensor with C-axis Aligned Crystalline Oxide Semiconductor FET/p-channel Silicon FET Stacked CMOS Structure

S. Yoneda¹, Y. Okamoto¹, T. Nakagawa¹, S. Maeda¹, T. Aoki¹, M. Kozuma¹, T. Ohmaru¹, H. Inoue¹, S. Nagatsuka¹, Y. Kurokawa¹, T. Ikeda¹, Y. Suzuki¹, N. Yamade¹, H. Miyairi¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Corp., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.M-9-1