[M-9-1] 300 μs Short Interval Continuous Capturing Image Sensor with C-axis Aligned Crystalline Oxide Semiconductor FET/p-channel Silicon FET Stacked CMOS Structure

S. Yoneda¹、Y. Okamoto¹、T. Nakagawa¹、S. Maeda¹、T. Aoki¹、M. Kozuma¹、T. Ohmaru¹、H. Inoue¹、S. Nagatsuka¹、Y. Kurokawa¹、T. Ikeda¹、Y. Suzuki¹、N. Yamade¹、H. Miyairi¹、S. Yamazaki¹ (1.Semiconductor Energy Lab. Corp., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.M-9-1