[N-2-3] Design for EMI suppression during reverse recovery by 600V lateral SOI PiN diode with traps

M. Tsukuda¹、H. Imaki²、I. Omura² (1.The International Centre for the Study of East Asian Development、2.Kyusyu Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2014.N-2-3