250&#176;C Switching Behavior of All SiC Power Module with Sandwich Structure

F. Kato; R. Simanjorang; F. Lang; H. Nakagawa; H. Yamaguchi; H. Sato

doi:https://doi.org/10.7567/SSDM.2014.N-2-5

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[N-2-5] 250°C Switching Behavior of All SiC Power Module with Sandwich Structure

F. Kato^1,2、R. Simanjorang²、F. Lang²、H. Nakagawa^1,2、H. Yamaguchi^1,2、H. Sato^1,2 (1.AIST、2.R&D Partnership for Future Power Electronics Tech. (Japan))

https://doi.org/10.7567/SSDM.2014.N-2-5

▲