250&#176;C Switching Behavior of All SiC Power Module with Sandwich Structure

F. Kato; R. Simanjorang; F. Lang; H. Nakagawa; H. Yamaguchi; H. Sato

doi:https://doi.org/10.7567/SSDM.2014.N-2-5

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[N-2-5] 250°C Switching Behavior of All SiC Power Module with Sandwich Structure

F. Kato^1,2, R. Simanjorang², F. Lang², H. Nakagawa^1,2, H. Yamaguchi^1,2, H. Sato^1,2 (1.AIST, 2.R&D Partnership for Future Power Electronics Tech. (Japan))

https://doi.org/10.7567/SSDM.2014.N-2-5

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