[N-8-2] Two-component model for threshold voltage shifts of SiC MOSFETs under negative bias stress

M. Matsumura¹、K. Kobayashi¹、Y. Mori¹、N. Tega¹、A. Shima¹、D. Hisamoto¹、Y. Shimamoto¹ (1.Hitachi, Ltd., (Japan))

https://doi.org/10.7567/SSDM.2014.N-8-2