[N-8-2] Two-component model for threshold voltage shifts of SiC MOSFETs under negative bias stress

M. Matsumura¹, K. Kobayashi¹, Y. Mori¹, N. Tega¹, A. Shima¹, D. Hisamoto¹, Y. Shimamoto¹ (1.Hitachi, Ltd., (Japan))

https://doi.org/10.7567/SSDM.2014.N-8-2