[P-3-2] Encapsulated Gate-All-Around InAs/InP Core-Shell Nanowire FETs
S. Sasaki1, K. Tateno1, G. Zhang1, H. Pigot1, Y. Harada1, S. Saito1, A. Fujiwara1, T. Sogawa1, K. Muraki1
(1.NTT Basic Research Labs. (Japan))
https://doi.org/10.7567/SSDM.2014.P-3-2