[P-3-2] Encapsulated Gate-All-Around InAs/InP Core-Shell Nanowire FETs

S. Sasaki¹、K. Tateno¹、G. Zhang¹、H. Pigot¹、Y. Harada¹、S. Saito¹、A. Fujiwara¹、T. Sogawa¹、K. Muraki¹ (1.NTT Basic Research Labs. (Japan))

https://doi.org/10.7567/SSDM.2014.P-3-2