[P-3-3] Integration of Vertical InAs Nanowires on Ge(111) by Selective-Area MOVPE

K. Tomioka^1,2、F. Ishizaka¹、E. Nakai¹、T. Fukui¹ (1.Hokkaido Univ.、2.JST-PRESTO (Japan))

https://doi.org/10.7567/SSDM.2014.P-3-3