[PS-1-14L] Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al2O3/GeOx Gate Dielectric
S.K. Wang1, X. Yang1,2, Z. Gong1, R. Liang3, B. Sun1, W. Zhao1, H. Chang1, J. Wang3, H.G. Liu1
(1.Inst. of Microelectronics of Chinese Academy of Sci., 2.Southeast Univ., 3.Tsinghua Univ. (China))
https://doi.org/10.7567/SSDM.2014.PS-1-14L