Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al2O3/GeOx Gate Dielectric

S.K. Wang; X. Yang; Z. Gong; R. Liang; B. Sun; W. Zhao; H. Chang; J. Wang; H.G. Liu

doi:https://doi.org/10.7567/SSDM.2014.PS-1-14L

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-1-14L] Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al₂O₃/GeO_x Gate Dielectric

S.K. Wang¹、X. Yang^1,2、Z. Gong¹、R. Liang³、B. Sun¹、W. Zhao¹、H. Chang¹、J. Wang³、H.G. Liu¹ (1.Inst. of Microelectronics of Chinese Academy of Sci.、2.Southeast Univ.、3.Tsinghua Univ. (China))

https://doi.org/10.7567/SSDM.2014.PS-1-14L

▲

2014 International Conference on Solid State Devices and Materials

[PS-1-14L] Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al2O3/GeOx Gate Dielectric

[PS-1-14L] Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al₂O₃/GeO_x Gate Dielectric