Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al2O3/GeOx Gate Dielectric

S.K. Wang; X. Yang; Z. Gong; R. Liang; B. Sun; W. Zhao; H. Chang; J. Wang; H.G. Liu

doi:https://doi.org/10.7567/SSDM.2014.PS-1-14L

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-1-14L] Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al₂O₃/GeO_x Gate Dielectric

S.K. Wang¹, X. Yang^1,2, Z. Gong¹, R. Liang³, B. Sun¹, W. Zhao¹, H. Chang¹, J. Wang³, H.G. Liu¹ (1.Inst. of Microelectronics of Chinese Academy of Sci., 2.Southeast Univ., 3.Tsinghua Univ. (China))

https://doi.org/10.7567/SSDM.2014.PS-1-14L

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2014 International Conference on Solid State Devices and Materials

[PS-1-14L] Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al2O3/GeOx Gate Dielectric

[PS-1-14L] Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al₂O₃/GeO_x Gate Dielectric