High-k &#8260; Ge Interface Passivation Using Cycling Ozone Oxidation

X. Yang; S.K. Wang; L. Han; X. Zhang; B. Sun; H.D. Chang; W. Zhao; Z.H. Zeng; H.G. Liu; Y.P. Cui

doi:https://doi.org/10.7567/SSDM.2014.PS-1-4

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-1-4] High-k ⁄ Ge Interface Passivation Using Cycling Ozone Oxidation

X. Yang^1,2、S.K. Wang¹、L. Han^1,2、X. Zhang²、B. Sun¹、H.D. Chang¹、W. Zhao¹、Z.H. Zeng^1,2、H.G. Liu¹、Y.P. Cui² (1.Inst. of Microelectronics of Chinese Academy of Science、2.Univ. of Southeast (China))

https://doi.org/10.7567/SSDM.2014.PS-1-4

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