[PS-1-5] Flexible Silicon-Germanium Devices With High-k/Metal Gate Stacks For Next Generation High Hole Mobility Channel Devices

J.M. Nassar¹、A.M. Hussain¹、J.P. Rojas¹、M.M. Hussain¹ (1.King Abdullah Univ. of Science and Technology (KAUST) (Saudi Arabia))

https://doi.org/10.7567/SSDM.2014.PS-1-5