[PS-1-6] Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs

Y. Liao¹、X. Ji¹、Q. Guo²、F. Yan¹ (1.Nanjing Univ.、2.Wuhan Xinxin Semiconductor Manufac.Company (China))

https://doi.org/10.7567/SSDM.2014.PS-1-6