The Japan Society of Applied Physics

[PS-1-6] Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs

Y. Liao1, X. Ji1, Q. Guo2, F. Yan1 (1.Nanjing Univ., 2.Wuhan Xinxin Semiconductor Manufac.Company (China))

https://doi.org/10.7567/SSDM.2014.PS-1-6