The Japan Society of Applied Physics

[PS-1-9] The Impact of Positive Bias Temperature Instabilities on Stacked High-k/Metal Gate Transistor with TiN Barrier Layer

D.C. Huang1, J. Gong2, C.F. Huang1, S.S. Chung3 (1.National Tsing Hua Univ., 2.Tunghai Univ., 3.NCTU (Taiwan))

https://doi.org/10.7567/SSDM.2014.PS-1-9