Quantitative characterization of border traps with widely-spread time constants in SiC MOS capacitors by transient capacitance measurements

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

Y. Fujino¹, R.H. Kikuchi¹, H. Hirai¹, K. Kita^1,2 (1.The Univ. of Tokyo, 2.JST-PRESTO (Japan))