Quantitative characterization of border traps with widely-spread time constants in SiC MOS capacitors by transient capacitance measurements

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

Y. Fujino¹、R.H. Kikuchi¹、H. Hirai¹、K. Kita^1,2 (1.The Univ. of Tokyo、2.JST-PRESTO (Japan))