The Japan Society of Applied Physics

[PS-14-2] Well proximity effect impact on fully isolated low Ron*Qg MOSFET performance

M. Shima1, M. Katayama1, H. Sato1, M. Onoda1, T. Yoshimura1, T. Ishihara1, Y. Suzuki1, N. Suzuki1, M. Hosoda2, T. Imada2, T. Hirose2 (1.Fujitsu Semiconductor Ltd., 2.Fujitsu Laboratories Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-14-2