Well proximity effect impact on fully isolated low R<sub>on</sub>*Q<sub>g</sub> MOSFET performance

M. Shima; M. Katayama; H. Sato; M. Onoda; T. Yoshimura; T. Ishihara; Y. Suzuki; N. Suzuki; M. Hosoda; T. Imada; T. Hirose

doi:https://doi.org/10.7567/SSDM.2014.PS-14-2

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-14-2] Well proximity effect impact on fully isolated low R_on*Q_g MOSFET performance

M. Shima¹、M. Katayama¹、H. Sato¹、M. Onoda¹、T. Yoshimura¹、T. Ishihara¹、Y. Suzuki¹、N. Suzuki¹、M. Hosoda²、T. Imada²、T. Hirose² (1.Fujitsu Semiconductor Ltd.、2.Fujitsu Laboratories Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-14-2

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2014 International Conference on Solid State Devices and Materials

[PS-14-2] Well proximity effect impact on fully isolated low Ron*Qg MOSFET performance

[PS-14-2] Well proximity effect impact on fully isolated low R_on*Q_g MOSFET performance