Growth and investigation of stacking fault of 4H-SiC C-face homoepitaxial layers with 1° off-angle

K. Masumoto; H. Asamizu; K. Tamura; C. Kudou; J. Nishio; K. Kazutoshi; T. Ohno; H. Okumura

doi:https://doi.org/10.7567/SSDM.2014.PS-14-5

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-14-5] Growth and investigation of stacking fault of 4H-SiC C-face homoepitaxial layers with 1° off-angle

K. Masumoto^1,2, H. Asamizu^1,3, K. Tamura^1,3, C. Kudou^1,4, J. Nishio^1,5, K. Kazutoshi^1,2, T. Ohno^1,6, H. Okumura^1,2 (1.FUPET, 2.AIST, 3.ROHM Co., Ltd., 4.Panasonic Corp., 5.Toshiba Corp., 6.Hitachi, Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-14-5

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