Growth and investigation of stacking fault of 4H-SiC C-face homoepitaxial layers with 1° off-angle

K. Masumoto; H. Asamizu; K. Tamura; C. Kudou; J. Nishio; K. Kazutoshi; T. Ohno; H. Okumura

doi:https://doi.org/10.7567/SSDM.2014.PS-14-5

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-14-5] Growth and investigation of stacking fault of 4H-SiC C-face homoepitaxial layers with 1° off-angle

K. Masumoto^1,2、H. Asamizu^1,3、K. Tamura^1,3、C. Kudou^1,4、J. Nishio^1,5、K. Kazutoshi^1,2、T. Ohno^1,6、H. Okumura^1,2 (1.FUPET、2.AIST、3.ROHM Co., Ltd.、4.Panasonic Corp.、5.Toshiba Corp.、6.Hitachi, Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-14-5

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