Joule Heating Induced Bonding Interface Improvement and Ti Breakthrough by Electron Bombardment for 40-μm Pitch of Cu TSV and Cu/Sn μ-Bump Pair

Y.J. Chang; Y.S. Hsieh; C.T. Ko; W.C. Lo; F.Y. Ouyang; C.S. Wu; Y.M. Cheng; W.J. Chen; K.N. Chen

doi:https://doi.org/10.7567/SSDM.2014.PS-2-1

[PS-2-1] Joule Heating Induced Bonding Interface Improvement and Ti Breakthrough by Electron Bombardment for 40-μm Pitch of Cu TSV and Cu/Sn μ-Bump Pair

Y.J. Chang¹, Y.S. Hsieh¹, C.T. Ko^1,2, W.C. Lo², F.Y. Ouyang³, C.S. Wu⁴, Y.M. Cheng⁴, W.J. Chen⁴, K.N. Chen¹ (1.NCTU, 2.Electronics and Optoelectronics Res. Lab., ITRI, 3.Department of Engineering and System Science, National Hsing Hua Univ., 4.Metal Industries R&D Centre (Taiwan))

https://doi.org/10.7567/SSDM.2014.PS-2-1

2014 International Conference on Solid State Devices and Materials

[PS-2-1] Joule Heating Induced Bonding Interface Improvement and Ti Breakthrough by Electron Bombardment for 40-μm Pitch of Cu TSV and Cu/Sn μ-Bump Pair