[PS-2-1] Joule Heating Induced Bonding Interface Improvement and Ti Breakthrough by Electron Bombardment for 40-μm Pitch of Cu TSV and Cu/Sn μ-Bump Pair

Y.J. Chang¹、Y.S. Hsieh¹、C.T. Ko^1,2、W.C. Lo²、F.Y. Ouyang³、C.S. Wu⁴、Y.M. Cheng⁴、W.J. Chen⁴、K.N. Chen¹ (1.NCTU、2.Electronics and Optoelectronics Res. Lab., ITRI、3.Department of Engineering and System Science, National Hsing Hua Univ.、4.Metal Industries R&D Centre (Taiwan))

https://doi.org/10.7567/SSDM.2014.PS-2-1