[PS-3-11] New Concept of Planar Germanium MOSFET with Stacked Germanide Layers at Source/Drain

H. Xu¹, L. Sun¹, Y.–B. Zhang¹, Y.–Q. Xia¹, J.–W. Han¹, Y. Wang¹, S.–D. Zhang¹ (1.Peking Univ. (China))

https://doi.org/10.7567/SSDM.2014.PS-3-11