Strain Effects on Monolayer MoS<sub>2</sub> Field Effect Transistors

L. Zeng; Z. Xin; P.Y. Chang; X.Y. Liu

doi:https://doi.org/10.7567/SSDM.2014.PS-3-3

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-3-3] Strain Effects on Monolayer MoS₂ Field Effect Transistors

L. Zeng¹、Z. Xin²、P.Y. Chang²、X.Y. Liu¹ (1.Inst. of Microelectronics, Peking Univ.、2.School of Electronic and Computer Engineering, Peking Univ. (China))

https://doi.org/10.7567/SSDM.2014.PS-3-3

▲

2014 International Conference on Solid State Devices and Materials

[PS-3-3] Strain Effects on Monolayer MoS2 Field Effect Transistors

[PS-3-3] Strain Effects on Monolayer MoS₂ Field Effect Transistors