[PS-3-4] Impact of Trap Behavior in High-k/Metal Gate p-MOSFET with Incorporated Fluorine on Low-Frequency Noise Characteristics

T.–H. Kao¹, S.–L. Wu², C.–Y. Wu², Y.–K. Fang¹, P.–C. Huang¹, C.–M. Lai³, C.–W. Hsu³, Y.–W. Chen³, O. Cheng³, S.–J. Chang¹ (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., 3.United Microelectronics Corp. (Taiwan))

https://doi.org/10.7567/SSDM.2014.PS-3-4