The Japan Society of Applied Physics

[PS-3-4] Impact of Trap Behavior in High-k/Metal Gate p-MOSFET with Incorporated Fluorine on Low-Frequency Noise Characteristics

T.–H. Kao1、S.–L. Wu2、C.–Y. Wu2、Y.–K. Fang1、P.–C. Huang1、C.–M. Lai3、C.–W. Hsu3、Y.–W. Chen3、O. Cheng3、S.–J. Chang1 (1.National Cheng Kung Univ.、2.Cheng Shiu Univ.、3.United Microelectronics Corp. (Taiwan))

https://doi.org/10.7567/SSDM.2014.PS-3-4