The Japan Society of Applied Physics

[PS-3-4] Impact of Trap Behavior in High-k/Metal Gate p-MOSFET with Incorporated Fluorine on Low-Frequency Noise Characteristics

T.–H. Kao1, S.–L. Wu2, C.–Y. Wu2, Y.–K. Fang1, P.–C. Huang1, C.–M. Lai3, C.–W. Hsu3, Y.–W. Chen3, O. Cheng3, S.–J. Chang1 (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., 3.United Microelectronics Corp. (Taiwan))