[PS-4-6] Improvement of Unipolar Resistive Switching by N₂ Annealing in Ni/ZrO₂/TaN Memory Device

T.L. Tsai¹、T.H. Ho¹、T.Y. Tseng¹ (1.NCTU (Taiwan))

https://doi.org/10.7567/SSDM.2014.PS-4-6