[PS-6-17L] Physical Mechanism of Source and Drain Resistance Reduction in Oxide TFT ～Towards High-Performance Short-Channel InGaZnO TFT～

K. Ota¹、K. Sakuma¹、T. Irisawa¹、C. Tanaka¹、D. Matsushita¹、M. Saitoh¹ (1.Toshiba Corp. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-6-17L