Physical Mechanism of Source and Drain Resistance Reduction in Oxide TFT ～Towards High-Performance Short-Channel InGaZnO TFT～

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

K. Ota¹, K. Sakuma¹, T. Irisawa¹, C. Tanaka¹, D. Matsushita¹, M. Saitoh¹ (1.Toshiba Corp. (Japan))