InGaSb Buried-Channel pMOSFET Fabricated by Using Digital Etch Technique

B. Sun; Z.H. Zeng; H.D. Chang; S.K. Wang; W.X. Wang; H.G. Liu

doi:https://doi.org/10.7567/SSDM.2014.PS-6-3

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-6-3] InGaSb Buried-Channel pMOSFET Fabricated by Using Digital Etch Technique

B. Sun¹、Z.H. Zeng^1,3、H.D. Chang¹、S.K. Wang¹、W.X. Wang²、H.G. Liu¹ (1.Inst. of Microelectronics of Chinese Academy of Sciences、2.Inst. of Physics, Chinese Academy of Sciences、3.Southeast Univ. (China))

https://doi.org/10.7567/SSDM.2014.PS-6-3

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